Author/Authors :
Tianlin Yang، نويسنده , , Zhisheng Zhang، نويسنده , , Yanhui Li، نويسنده , , Maoshui Lv، نويسنده , , Shumei Song، نويسنده , , Zhongchen Wu، نويسنده , , Jincheng Yan، نويسنده , , Shenghao Han *، نويسنده ,
Abstract :
Zinc nitride films were prepared on quartz substrates by rf magnetron sputtering using pure zinc target in N2–Ar plasma. X-ray diffraction (XRD) analysis indicates that the films just after deposition are polycrystalline with a cubic structure and a preferred orientation of (4 0 0). X-ray photoelectron spectroscopy (XPS) analysis also confirms the formation of N–Zn bonds and the substitution incorporation of oxygen for nitrogen on the surface of the films. The optical band gap is calculated from the transmittance spectra of films just after deposition, and a direct band gap of 1.01 ± 0.02 eV is obtained. Room temperature PL measurement is also performed to investigate the effect of defect on the band gap and quality of the zinc nitride films.