Title of article :
The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy
Author/Authors :
Zhensheng Tao، نويسنده , , Ning Zhan، نويسنده , , Hongbin Yang، نويسنده , , Yan Ling، نويسنده , , Zhenyang Zhong، نويسنده , , Fang Lu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
3548
To page :
3551
Abstract :
Systematic studies of Ge quantum dots (QDs) grown on strained Si0.3Ge0.7 layer have been carried out by photoluminescence (PL) and deep level transient spectroscopy (DLTS). In PL measurements, two peaks around 0.7 eV are distinguished, which are assigned to two types of QDs observed by atomic force microscopy (AFM). Large blueshifts of the PL peaks from small QDs with the increase of excitation power are observed and attributed to the band bending effects typical for type-II band alignment. From DLTS measurements, the energy levels of holes in both types of QDs are derived, which shift with the change of the number of holes in QDs due to their charge energy. By comparing results from PL and DLTS measurements, further understanding of band alignment with the increase of the number of excitons in QDs is deduced.
Keywords :
GeSi quantum dots , Photoluminescence , DLTS
Journal title :
Applied Surface Science
Serial Year :
2009
Journal title :
Applied Surface Science
Record number :
1010953
Link To Document :
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