NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II–VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II–VI compound semiconductor like Cd1−xMnxTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd1−xMnxTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd1−xMnxTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd1−xMnxTe.