Author/Authors :
Yoshio Uhara، نويسنده , , Tsubasa Urano، نويسنده , , Masatoshi Itoh، نويسنده , , Hideo Hayashi، نويسنده , , Yousuke Manba، نويسنده , , Akifumi Taniseki، نويسنده , , Houin Jyan، نويسنده , , Eiichi Nishikawa، نويسنده , , Sigeru Saito، نويسنده ,
Abstract :
Changes in filling characteristics when adding oxygen to sputtering gas (1 at.%N2–Ar) were investigated using high-vacuum planar magnetron sputtering equipment having little residual gas effects. It was found that copper filling accelerates for oxygen partial pressure in sputtering gas of image and a substrate temperature of 300–320 °C. Under these conditions, 70% copper filling in fine holes of diameter ϕ = 100 nm (AR = 4.5) was obtained.
Keywords :
Copper filling , Planar magnetron sputtering , Reflow method , Fine holes , Added oxygen
