Optical properties of Cd1−xZnxTe thin films fabricated through sputtering of compound semiconductors

Cd1−xZnxTe thin film fabrication is necessary for its photovoltaic and imaging applications in large scale. Thermally annealed and thereby interdiffused r.f. sputtered multilayers comprising of CdTe and ZnTe have been utilized here for the fabrication of Cd1−xZnxTe thin films. Photoluminescence and change of resistance of the multilayer under illumination were studied using different annealing temperatures and varying number of repetitions. It was found that three number of repetitions annealed at 300 °C exhibited the best results.