Title of article
Selected properties of a-C:H PACVD coatings
Author/Authors
F. Cerny، نويسنده , , V. Jech، نويسنده , , S. Konvickova، نويسنده , , J. Suchanek، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
22
To page
25
Abstract
a-C:H films were deposited by rf PACVD from methane and their growth rate, thermal treatment, morphology, adhesion and electrical passivation properties were investigated. Deposition at room temperature gave the highest film growth rates. The Raman spectra obtained for a-C:H films indicated that the D peak becomes more pronounced as the annealing temperature grows higher. The rf plasma produced a-C:H passivation films which are sufficiently insulating at voltages up to ca. 2200 V.
Keywords
a-C:H films , Film growth rate , Electrical passivation , rf PACVD
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1012495
Link To Document