Author/Authors :
S. Chromik، نويسنده , , P. Gierlowski، نويسنده , , M. Spankova، نويسنده , , E. Dobro?ka، نويسنده , , I. V?vra، نويسنده , , V. ?trb?k، نويسنده , , T. Lalinsk?، نويسنده , , M. Sojkov?، نويسنده , , J. Liday، نويسنده , , P. Vogrin?i?، نويسنده , , J.P. Espinos، نويسنده ,
Abstract :
Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Φ-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a–b YBCO planes rotated by 120° to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 °C is applied.
Keywords :
GaN substrates , X-ray diffraction , Transmission electron microscopy , Auger electron spectroscopy , Magnetron sputtering , Pulsed laser deposition (PLD) , YBCO thin films
