Title of article
Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions
Author/Authors
A. Plecenik، نويسنده , , M. Tomasek، نويسنده , , T. Plecenik، نويسنده , , M. Truchly، نويسنده , , J. Noskovic، نويسنده , , M. Zahoran، نويسنده , , T. Roch، نويسنده , , M. Belogolovskii، نويسنده , , M. Spankova، نويسنده , , S. Chromik، نويسنده , , P. Kus، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
5684
To page
5687
Abstract
Current–voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7−x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7−x thin film–PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7−x films in the nano-scale vicinity of the junction interface under applied electrical fields.
Keywords
STM , Resistive switching effect , Planar junction , Superconductivity
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1012926
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