Title of article :
Assigning chemical configurations to the XPS features observed at pristine (1 0 0) Si surface resulting after etching in HF aqueous solution
Author/Authors :
G.F. Cerofolini ، نويسنده , , E. Romano، نويسنده , , D. Narducci، نويسنده , , P. Belanzoni، نويسنده , , G. Giorgi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
While the analysis of the spectra resulting from energy- or angle-resolved X-ray photoelectron spectroscopy allows the in-depth atomic composition in the probed region to be determined even for complex samples, the determination of the bonding configuration is less trivial. In this paper it is shown that a description of the chemical shift in terms of partial charge and Madelung potential (as results from local modelling of the atom) can provide information even in complicate situations, like that characterizing the hydrogen-terminated (1 0 0) Si prepared by image etching of the native oxide.
Keywords :
(1 0 0) Si surface , HF-etching of silicon , Inverse problem in XPS , XPS and infrared analysis of silicon surfaces
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science