Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

CeO2 films were prepared on LaMnO3/MgO/Gd2Zr2O7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (PL) from 46 to 101 W. Epitaxial (1 0 0) CeO2 films were prepared at PL = 46–93 W (deposition temperature, Tdep = 705–792 K). Epitaxial CeO2 films had rectangular-shaped grains at PL = 46–77 W (Tdep = 705–754 K), while square-shaped grains were obtained at PL = 85–93 W (Tdep = 769–792 K). CeO2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO2 films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and ϕ-scan on (2 2 0) reflection of 3.4–3.2° and 6.0–7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO2 films had a maximum of 4.6 μm h−1 at PL = 77 W (Tdep = 754 K).