• Title of article

    Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface Review Article

  • Author/Authors

    Rafael Gonz?lez-Hern?ndez، نويسنده , , William L?pez، نويسنده , , César Ortega، نويسنده , , Mar?a Guadalupe Moreno-Armenta، نويسنده , , Jairo Arbey Rodriguez، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    6495
  • To page
    6498
  • Abstract
    First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-image surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H3 sites and T4 sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.
  • Keywords
    Density-functional calculations , Gallium nitride , Surface diffusion , Chemisorption
  • Journal title
    Applied Surface Science
  • Serial Year
    2010
  • Journal title
    Applied Surface Science
  • Record number

    1013060