Title of article
Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface Review Article
Author/Authors
Rafael Gonz?lez-Hern?ndez، نويسنده , , William L?pez، نويسنده , , César Ortega، نويسنده , , Mar?a Guadalupe Moreno-Armenta، نويسنده , , Jairo Arbey Rodriguez، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
6495
To page
6498
Abstract
First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-image surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H3 sites and T4 sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.
Keywords
Density-functional calculations , Gallium nitride , Surface diffusion , Chemisorption
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1013060
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