Title of article
Co-sensitized quantum dot solar cell based on ZnO nanowire
Author/Authors
J. Chen، نويسنده , , J. Wu، نويسنده , , W. Lei، نويسنده , , J.L. Song، نويسنده , , W.Q. Deng، نويسنده , , X.W. Sun، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
7438
To page
7441
Abstract
An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV–vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm−2).
Keywords
Solar cell , CdS , CdSe , ZnO nanowire , Quantum dot
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1013218
Link To Document