Title of article :
Effect of hydrogenation vs. re-heating on intrinsic magnetization of Co doped In2O3
Author/Authors :
A. Samariya، نويسنده , , R.K. Singhal، نويسنده , , Sudhish Kumar، نويسنده , , Y.T. Xing، نويسنده , , S.C. Sharma، نويسنده , , P. Kumari، نويسنده , , D.C. Jain، نويسنده , , S.N. Dolia، نويسنده , , U.P. Deshpande، نويسنده , , M. V. Rama Rao and T. Shripathi، نويسنده , , E. Saitovitch، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
585
To page :
590
Abstract :
Influence of Co doping for In in In2O3 matrix has been investigated to study the effect on magnetic vs. electronic properties. Rietveld refinement of X-ray diffraction patterns confirmed formation of single phase cubic bixbyite structure without any parasitic phase. Photoelectron spectroscopy and refinement results further revealed that dopant Co2+ ions are well incorporated at the In3+ sites in In2O3 lattice and also ruled out formation of cluster in the doped samples. Magnetization measurements infer that pure In2O3 is diamagnetic and turns to weak ferromagnetic upon Co doping. Hydrogenation further induces a huge ferromagnetism at 300 K that vanishes upon re-heating. Experimental findings confirm the induced ferromagnetism to be intrinsic, and the magnetic moments to be associated with the point defects (oxygen vacancies Vo) or bound magnetic polarons around the dopant ions.
Keywords :
Magnetic semiconductors , X-ray photoelectron spectroscopy
Journal title :
Applied Surface Science
Serial Year :
2010
Journal title :
Applied Surface Science
Record number :
1013356
Link To Document :
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