Title of article :
An investigation of structural phase transformation and electrical resistivity in Ta films
Author/Authors :
A. Javed، نويسنده , , Ji-Bing Sun، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
In this work, we report the effect of substrate, film thickness and sputter pressure on the phase transformation and electrical resistivity in tantalum (Ta) films. The films were grown on Si(1 0 0) substrates with native oxides in place and glass substrates by varying the film thickness (t) and pressure of the working gas (pAr). X-ray diffraction (XRD) analysis showed that the formation of α and β phases in Ta films strongly depend on the choice of substrate, film thickness t and sputter pressure pAr. A stable α-phase was observed on Si(1 0 0) substrates for t ≤ 200 nm. Both α and β phases were found to grow on glass substrates at all thicknesses except t = 100 nm. All the films grown on Si(1 0 0) substrates for pAr ≤ 6.5 mTorr had α-phase with strong (1 1 0) texture normal to the film plane. The glass substrates promoted the formation of β-phase in all pAr except pAr = 5.5 mTorr. The resistivity ρ was observed to decrease with t, whereas ρ was increased with pAr on Si(1 0 0) substrates. In all films, the measured resistivity ρ was greater than the bulk resistivity. The resistivity ρ was influenced by the effects of surface roughness and grain size.
Keywords :
Metallic films , Phase transformation , Surface roughness , Electrical resistivity , Growth parameters
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science