Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In0.82Ga0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In0.82Ga0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In0.82Ga0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In0.82Ga0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In0.82Ga0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.