Structure, electrical and optical properties of TiNx films by atmospheric pressure chemical vapor deposition Review Article

Titanium nitride (TiNx) films with various nitride compositions (x) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl4 and NH3 as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiNx films exhibited a transmission band with a peak value of about 15% in the visible region (400–700 nm). As the wavelength increased to transition point (λT-R), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50% near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength (λT-R) with increasing the nitride composition were also discussed.