Comparison of ZnO thin films grown on a polycrystalline 3C–SiC buffer layer by RF magnetron sputtering and a sol–gel method

Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C–SiC buffer layer using RF magnetron sputtering and a sol–gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol–gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C–SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C–SiC intermediate layer caused by the different deposition techniques were also considered and discussed.