Self assembled micro masking effect in the fabrication of SiC nanopillars by ICP-RIE dry etching

This report presents the results of the novel fabrication of 4H-SiC pillars with nanopores using ICP-RIE dry etching. Cl2/Ar gas plasma with various mass flow rates was used in this etching process to produce SiC nanopillars without using patterned etch mask. Cylindrical pillars of 300 nm diameter and 500 nm height with smooth side walls were etched on SiC wafer. The etching condition for the optimized fabrication of SiC nanopillars is presented in this report. Each nanopillar has been produced with a nanosize pore at the center along its length and up to the middle of the cylindrical nanopillar; it is a unique feature has not ever been reported in case of SiC. Inclusion of oxygen was found influence the formation of nanopillars by the effect of SiO2 micro masking. The formation of self assembled SiO2 layer and its micro masking effect in the fabrication of this unique nanostructure has been investigated using TEM, STEM and EDAX measurements.