Title of article :
The effect of etching time on the CdZnTe surface
Author/Authors :
H. Bensalah، نويسنده , , J.L. Plaza*، نويسنده , , J. Crocco، نويسنده , , Q. Zheng، نويسنده , , V. Carcelén، نويسنده , , A. Bensouici، نويسنده , , E. Dieguez، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
4633
To page :
4636
Abstract :
The surface quality of CdZnTe plays an important role in the performance of sensors based on this material. In this paper the effect of chemical etching on Cd0.9Zn0.1Te sensor performance was examined. Sample surfaces were treated with the same concentration 2% Br-MeOH for different etching times (30 s, 2, 4, 6, 8 min). The surfaces were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and I–V Measurement. These results demonstrate that the best surface quality can be obtained by chemical etching for 30 s. Under these experimental conditions, the surface composition Te/Cd + Zn approaches 1, the roughness is lower than 3 nm, and the leakage current shows a value lower than 10 nA.
Keywords :
Surface quality , AFM , SEM , Semiconducting II–VI materials , Electrical properties
Journal title :
Applied Surface Science
Serial Year :
2011
Journal title :
Applied Surface Science
Record number :
1014034
Link To Document :
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