• Title of article

    The effect of etching time on the CdZnTe surface

  • Author/Authors

    H. Bensalah، نويسنده , , J.L. Plaza*، نويسنده , , J. Crocco، نويسنده , , Q. Zheng، نويسنده , , V. Carcelén، نويسنده , , A. Bensouici، نويسنده , , E. Dieguez، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    4633
  • To page
    4636
  • Abstract
    The surface quality of CdZnTe plays an important role in the performance of sensors based on this material. In this paper the effect of chemical etching on Cd0.9Zn0.1Te sensor performance was examined. Sample surfaces were treated with the same concentration 2% Br-MeOH for different etching times (30 s, 2, 4, 6, 8 min). The surfaces were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and I–V Measurement. These results demonstrate that the best surface quality can be obtained by chemical etching for 30 s. Under these experimental conditions, the surface composition Te/Cd + Zn approaches 1, the roughness is lower than 3 nm, and the leakage current shows a value lower than 10 nA.
  • Keywords
    Surface quality , AFM , SEM , Semiconducting II–VI materials , Electrical properties
  • Journal title
    Applied Surface Science
  • Serial Year
    2011
  • Journal title
    Applied Surface Science
  • Record number

    1014034