Author/Authors :
B.S. Li، نويسنده , , C.H. Zhang، نويسنده , , Y.R. Zhong، نويسنده , , D.N. Wang، نويسنده , , L.H. Zhou، نويسنده , , Y.T. Yang، نويسنده , , L.Q. Zhang، نويسنده , , H.H. Zhang، نويسنده , , Y. Zhang، نويسنده , , L.H. Han، نويسنده ,
Abstract :
The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A 〈1 0 0〉-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 × 1016 cm−2 at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 °C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient.
Keywords :
Silicon , TEM , Positron annihilation , Annealing ambient , Void
