Author/Authors :
J.M. Lin، نويسنده , , Y.Z. Zhang، نويسنده , , Z.Z. Ye*، نويسنده , , X.Q. Gu، نويسنده , , X.H. Pan، نويسنده , , Y.F. Yang، نويسنده , , J.G. Lu، نويسنده , , H.P. He، نويسنده , , B.H. Zhao، نويسنده ,
Abstract :
Nb-doped ZnO thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from 100 to 500 °C by analyzing the structural, optical, and electrical properties. The Nb-doped ZnO films possessed a good crystallinity with a c-axis preferential orientation and a high transmittance (above 85%) in the visible region. The obtained film deposited at 350 °C exhibited the best electrical properties with the lowest room-temperature resistivity of around 5 × 10−4 Ω cm. Guided by x-ray photoemission spectroscopy analysis, NbZn3+ is believed to be the very possible donor in the Nb-doped ZnO films.
