Title of article
The study of optimal oxidation time and different temperatures for high quality VO2 thin film based on the sputtering oxidation coupling method
Author/Authors
Xiaofeng Xu، نويسنده , , Xinfeng He، نويسنده , , Gang Wang، نويسنده , , Xiaolong Yuan، نويسنده , , Xingxing Liu، نويسنده , , Haiyan Huang، نويسنده , , Sheng Yao، نويسنده , , Huaizhong Xing، نويسنده , , Xiaoshuang Chen، نويسنده , , Junhao Chu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
8824
To page
8827
Abstract
The high quality Vanadium dioxide (VO2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO2 thin film samples exhibit a good metal–insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K–783 K, in good agreement with the Wagnerʹs high-temperature oxidation model.
Keywords
Sputtering oxidation coupling , Vanadium dioxide , Temperature , Optimal oxidation time
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1014802
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