Title of article :
Nitrogen doping effects on the structure of graphene
Author/Authors :
Dongsheng Geng ، نويسنده , , Songlan Yang، نويسنده , , Yong Zhang، نويسنده , , Jinli Yang، نويسنده , , Jian Liu، نويسنده , , Ruying Li، نويسنده , , Tsun-Kong Sham، نويسنده , , Xueliang Sun، نويسنده , , Siyu Ye، نويسنده , , Shanna Knights، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
6
From page :
9193
To page :
9198
Abstract :
Graphene and nitrogen doped graphene have been prepared by modified Hummers’ method and the following ammonia heat-treatment process, respectively. The effects of N-doping on the structure of graphene have been systematically investigated by various characterization techniques. SEM, TEM, BET, Raman and XRD analysis were used to distinguish the difference of the microstructures; and FT-IR, XPS, especially XANES were performed to elucidate the bonding information such as C–N. The effect of nitrogen doping on the structure of graphene has been obtained. More defects are present on nitrogen doped graphene as elucidated by BET, XRD, Raman, and XANES characterizations. XANES analysis also indicates that the N-doping decreases the surface oxygen-containing groups.
Keywords :
structure , Nitrogen doping , Defects , Graphene
Journal title :
Applied Surface Science
Serial Year :
2011
Journal title :
Applied Surface Science
Record number :
1014859
Link To Document :
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