Title of article
Nitrogen doping effects on the structure of graphene
Author/Authors
Dongsheng Geng ، نويسنده , , Songlan Yang، نويسنده , , Yong Zhang، نويسنده , , Jinli Yang، نويسنده , , Jian Liu، نويسنده , , Ruying Li، نويسنده , , Tsun-Kong Sham، نويسنده , , Xueliang Sun، نويسنده , , Siyu Ye، نويسنده , , Shanna Knights، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
6
From page
9193
To page
9198
Abstract
Graphene and nitrogen doped graphene have been prepared by modified Hummers’ method and the following ammonia heat-treatment process, respectively. The effects of N-doping on the structure of graphene have been systematically investigated by various characterization techniques. SEM, TEM, BET, Raman and XRD analysis were used to distinguish the difference of the microstructures; and FT-IR, XPS, especially XANES were performed to elucidate the bonding information such as C–N. The effect of nitrogen doping on the structure of graphene has been obtained. More defects are present on nitrogen doped graphene as elucidated by BET, XRD, Raman, and XANES characterizations. XANES analysis also indicates that the N-doping decreases the surface oxygen-containing groups.
Keywords
structure , Nitrogen doping , Defects , Graphene
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1014859
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