• Title of article

    Nitrogen doping effects on the structure of graphene

  • Author/Authors

    Dongsheng Geng ، نويسنده , , Songlan Yang، نويسنده , , Yong Zhang، نويسنده , , Jinli Yang، نويسنده , , Jian Liu، نويسنده , , Ruying Li، نويسنده , , Tsun-Kong Sham، نويسنده , , Xueliang Sun، نويسنده , , Siyu Ye، نويسنده , , Shanna Knights، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    6
  • From page
    9193
  • To page
    9198
  • Abstract
    Graphene and nitrogen doped graphene have been prepared by modified Hummers’ method and the following ammonia heat-treatment process, respectively. The effects of N-doping on the structure of graphene have been systematically investigated by various characterization techniques. SEM, TEM, BET, Raman and XRD analysis were used to distinguish the difference of the microstructures; and FT-IR, XPS, especially XANES were performed to elucidate the bonding information such as C–N. The effect of nitrogen doping on the structure of graphene has been obtained. More defects are present on nitrogen doped graphene as elucidated by BET, XRD, Raman, and XANES characterizations. XANES analysis also indicates that the N-doping decreases the surface oxygen-containing groups.
  • Keywords
    structure , Nitrogen doping , Defects , Graphene
  • Journal title
    Applied Surface Science
  • Serial Year
    2011
  • Journal title
    Applied Surface Science
  • Record number

    1014859