Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography

We demonstrate the nanoscale resistive random access memory (RRAM) element consisting of an approximately 30 nm diameter NiO nanodot and two bridging Au nanowires, formed by a dip-pen nanolithography technique using nickel carbonate (Ni2(CO3)(OH)2) and [AuCl4]− complex solutions, respectively. The Au/NiO/Au nanowire resistive switch exhibits typical unipolar switching characteristics with high performance at low Set and Reset voltages.