Dielectric properties of continuous composition spreaded MgO–Ta2O5 thin films

The dielectric properties of MgO–Ta2O5 continuous composition spread (CCS) thin films were investigated. The MgO–Ta2O5 CCS thin films were deposited on Pt/Ti/SiO2/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 °C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO–Ta2O5 CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta2O5–MgO CCS thin film (post annealed at 350 °C) showing superior dielectric properties of high dielectric constant (k ∼ 28) and low dielectric loss (tan δ < 0⋅004) at 1 MHz were found in the area of 3–5 mm apart from Ta2O5 side on the substrate. The cationʹs composition of thin film was Mg:Ta = 0.4:2 at%.