Broadband antireflection of silicon nanorod arrays prepared by plasma enhanced chemical vapor deposition

Hydrogenated nanocrystalline Si (nc-Si:H) nanorod arrays were cost-effectively prepared on electrodeposited nickel nanocones substrates by very high frequency plasma enhanced vapor deposition. The antireflection properties of the obtained Si nanorod arrays were investigated carefully for the possible application in solar cells. It was found that the structures of nc-Si:H nanorod arrays can be tuned to obtain a very low reflectance especially in the near infrared region. The obtained Si nanostructure with well-separated nanorods, each of which had an average diameter of 200 nm and height of 700 nm, showed a reflectance value of <5% at normal incident over a wide wavelength of 400–1100 nm.