Title of article
BiFeO3/Zn1−xMnxO bilayered thin films
Author/Authors
Jiagang Wu *، نويسنده , , John Wang، نويسنده , , Dingquan Xiao، نويسنده , , Jianguo Zhu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
1390
To page
1394
Abstract
BiFeO3/Zn1−xMnxO (x = 0–0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0–130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of ∼15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.
Keywords
Electrical properties , Bilayered thin films , Magnetron sputtering , BiFeO3/Zn1?xMnxO
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1015364
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