Author/Authors :
Nikandish، G. نويسنده M.Sc. degree from Sharif University of Technology, , , Youse ,، A. نويسنده M.S. degree from Sharif University of Technology, , , Mohammadi Goltapeh، E. نويسنده , , Babakrpour، E. نويسنده M.S. degree in microelectronic circuits from Sharif University of Technology , , Medi، A. نويسنده Assistant Professor in the Electrical Engineering Department, Sharif University of Technology, ,
Abstract :
A large-signal analysis of sub-harmonic parametric oscillations in Power
Ampli ers (PAs) is presented in this paper. Simpli ed models for current-voltage and
channel charge characteristics of short-channel pseudomorphic High Electron Mobility
Transistors (pHEMTs) are adopted to investigate the e ects of the device transconductance
and gate-source capacitance nonlinearities on the ampli er stability. A 5-W Ku-band
PA is designed to demonstrate the application of the presented analysis. MMIC PA is
implemented in a 0.25-m GaAs pHEMT process. According to the measurements, the PA
provides 37.5 dBm (5.6 W) of output power, 36% of Power Added Eciency (PAE), and
small-signal gain of 18 dB on the frequency band of 12-15 GHz.
