Title of article
Ion beam sensitized SiO2 surface for halide ions
Author/Authors
M.T Pham، نويسنده , , W. Matz، نويسنده , , K. D. Moller، نويسنده , , J. Hüller، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
3
From page
289
To page
291
Abstract
Halide ion sensitivity was obtained on a 100 nm thin SiO2 film implanted with Ag and Cl. An X-ray diffraction study showed the formation of metallic silver spheres with an average size of 20 nm embedded within the SiO2 matrix which are probably sheathed by a thin AgCl skin.
Keywords
Surface techniques , Silicon dioxide surface , Halide ions
Journal title
Analytica Chimica Acta
Serial Year
1996
Journal title
Analytica Chimica Acta
Record number
1023940
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