Author/Authors :
Izadpanah Tous، Saber نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad , , Asghari، Ensieh نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad , , Pourandoost، Reza نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad , , Razeghi، Behrooz نويسنده Department of Electrical Engineering, Ferdowsi University, Mashhad ,
Abstract :
In this paper, an ultra-low power/ultra-low voltage five-stage. The low frequency voltage-controlled single-ended ring oscillator using the dynamic threshold voltage MOSFET (DTMOS) is presented. The proposed oscillator is designed and simulated using TSMC 0.18?m.TheRF CMOS technology with 0.4 V power supply. In this design all transistors working at the sub-threshold (weak inversion) region. The output frequency varies from 26.6-210.5 kHz. By controlling the voltages from 0 V to 0.4 V. Its power consumption and the phase noise at a 100 kHz offset at the minimum(maximum) oscillation frequency is respectively 6.42nW (8.62 nW) and -120.5 dBc/Hz (-113.15 dBc/Hz).
