Experimental characterization of on-chip inductor and capacitor interconnect: part I. Series case

Detailed experimental investigations described here show the overall characteristics of on-chip inductor and capacitor serial interconnects (L--Cs) on silicon substrates. Using a new equivalent circuit model and the measured S parameters obtained by deembedding techniques, we examine and compare a single inductor, single capacitor, and two sets of series L--Cs. Agreement between the measured and simulated S parameters is excellent. At low frequency, the first resonant frequency f/sub res/ of series L--Cs can be easily determined by f/sub res/=(2 (pi)(radical)(LC))/sup -1/, while at high frequency, parasitic parameter effects of both the substrate and the metal strips on f/sub res/ of the L— Cs circuit must be considered.