Title of article
A process integration of high-performance 64-kb MRAM
Author/Authors
S.Y.، Lee, نويسنده , , H.J.، Kim, نويسنده , , Kim، Kinam نويسنده , , W.C.، Jeong, نويسنده , , K.H.، Koh, نويسنده , , G.T.، Jeong, نويسنده , , J.H.، Park, نويسنده , , J.H.، Oh, نويسنده , , I.H.، Song, نويسنده , , H.S.، Jeong, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2850
From page
2851
To page
0
Abstract
We have demonstrated fully integrated 64-kb magnetoresistive random access memory (MRAM) using 0.24-(mu)m CMOS technology and discussed some key issues in process integration. Optimal tunneling magnetoresistive (TMR) properties of MRAM bits (37% of TMR ratio and 5-10 k(omega).(mu)m/sup 2/ of RA) were obtained mainly by the control of bottom electrode roughness, and electrical shorting was avoided by some commercialized wet solutions. In viewpoint of process integration, excellent TMR properties of magnetic tunnel junction (MTJ) fresh films and prevention of their degradation in post patterning process are two crucial factors, and especially, electrical shorting requires some careful control.
Keywords
waist circumference , Abdominal obesity , Prospective study , Food patterns
Journal title
IEEE TRANSACTIONS ON MAGNETICS
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON MAGNETICS
Record number
104301
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