Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (1 0 0) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (1 0 0) and (View the MathML source InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (View the MathML source and View the MathML source) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (4 1 1)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface.