Title of article :
Relaxation time for a charge carrier due to its scattering from other charge carriers in superlattices
Author/Authors :
A.C. Sharma، نويسنده , , P. Tripathi، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
8
From page :
306
To page :
313
Abstract :
A calculation of relaxation time for (i) electron–electron scattering in a modulation-doped superlattice of type-I and (ii) electron–electron, hole–hole and electron–hole scattering processes in a compositional superlattice of type-II has been performed, using Fermiʹs golden rule. As compared to a two-dimensional electron gas system, both intralayer and interlayer interactions, between charge carriers in a superlattice, contribute to relaxation time. It is found that scattering processes at all possible value of momentum transfer contribute to relaxation time, for a given value of temperature and carrier density. We further find interlayer interactions in a superlattice make a significant contribution to relaxation time. Relaxation time is found to decrease on increasing temperature, carrier density and single particle energy, in a superlattice. The computed relaxation time for an electron (hole) in a superlattice enhances on increasing the width of layer consisting of electrons (holes). The electron–hole (hole–electron) scattering process in a type-II superlattice yields maximum contribution to the relaxation time when a hole layer lies exactly in between two consecutive electron layers.
Keywords :
Intra and interlayer interactions , Charge carrier scattering , Relaxation time
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2000
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1044606
Link To Document :
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