Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon

We have studied the dependence of hot electron scattering rate on temperature in n-GaAs/AlAs types I and II multiple quantum wells. For a sample with well width View the MathML source, which is on the borderline between types I and II band alignment, the increase of the temperature in the range 6–View the MathML source leads to the strong decrease of the hot electron scattering rate. We explain this result by ionization of donors and transfer of cold electrons from the Γ-valley of GaAs to the X-valley of AlAs.