Title of article
Linear and nonlinear optical properties of excitons in semiconductor–dielectric quantum wires
Author/Authors
K. Chernoutsan، نويسنده , , V. Dneprovskii، نويسنده , , S. S. Gavrilov، نويسنده , , V. Gusev، نويسنده , , E. Muljarov، نويسنده , , S. Romanov، نويسنده , , A. Syrnicov، نويسنده , , O. Shaligina، نويسنده , , A. E. Zhukov، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
7
From page
111
To page
117
Abstract
The characteristic features of the absorption, luminescence and photoluminescence excitation spectra of InP nanocrystals crystallized in chrysotile asbestos nanotubes and CdS nanocrystals crystallized in hollow channels of a dielectric template have been explained in terms of exciton transitions in semiconductor–dielectric quantum wires. In these structures, the dielectric confinement effect leads to a considerable increase of the exciton binding energy—the Coulomb attraction between electron and hole is considerably enhanced as a result of the difference between the permittivities of the semiconductor and insulator.The kinetics of porous InP photoluminescence at high excitation by picosecond laser pulses has been explained by the slowing down of the intraband energy relaxation, collective exciton–exciton (electron) interaction and Auger recombination in nanostructures.
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044802
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