Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Mid-infrared electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot (QD) light emitting diodes. The QDs were grown from the liquid phase at 590°C on an InAs(1 0 0) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At View the MathML source and View the MathML source injection current, a broad emission band was observed, centred at View the MathML source, associated with transitions involving confined holes inside the InAsSb quantum dot. The QD emission band exhibits a blue shift with increasing injection current and the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The QD electroluminescence was observed to persist up to room temperature.