Title of article
Electronic properties of AA-stacked nanographite ribbons
Author/Authors
F.L. Shyu، نويسنده , , M.F. Lin، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
9
From page
214
To page
222
Abstract
The interlayer interactions in the AA-stacked nanographite ribbons significantly affect density of states, energy gap, band structure, and free carriers. Density of states exhibits many special structures, including plateau, discontinuities, and divergent peaks. Energy gaps of the semiconducting armchair ribbons decline rapidly as the number of ribbons increases. Most of them could exhibit the semiconductor–semimetal transition. Zigzag ribbons are metallic for any ribbon number, while the low energy density of states is drastically changed by the interlayer interactions. Carrier density also depends on the ribbon width and the edge structure. The AA-stacked nanographite ribbons quite differ from the graphite layers or the AB-stacked nanographite ribbons.
Keywords
Nanographite ribbons , Graphite , Band structures , Electronic properties
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044848
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