Title of article :
Multivalley effect on electronic states in Si quantum dots
Author/Authors :
Yoko Hada، نويسنده , , Mikio Eto، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
2
From page :
24
To page :
25
Abstract :
Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about View the MathML source, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S=N/2, to gain the exchange energy.
Keywords :
Quantum dot , Silicon , Multivalley , Coulomb oscillation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1044864
Link To Document :
بازگشت