Author/Authors :
A Morel، نويسنده , , P Lefebvre، نويسنده , , T Taliercio، نويسنده , , Bretagnon، P. نويسنده , , B Gil، نويسنده , , N Grandjean، نويسنده , , B Damilano، نويسنده , , J Massies، نويسنده ,
Abstract :
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional “pseudo-donor–acceptor pairs”.