Title of article
Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots
Author/Authors
J.S. de Sousa، نويسنده , , J-P Leburton، نويسنده , , V.N. Freire، نويسنده , , E.F. da Silva Jr.، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
73
To page
76
Abstract
The role of a shell-like interfacial layer on the ground state recombination energy of confined electrons and holes in Si/SiO2 quantum dots is addressed in this work. The depth of the interfacial confinement potential and nanocrystal diameter were investigated and we found that the dependence of the recombination energy on the quantum dot diameter is weakened by the presence of the interface defect.
Keywords
Quantum dots , Recombination energy , Interfacial layer
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044877
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