Author/Authors :
F. Fossard، نويسنده , , A. Helman، نويسنده , , F.H. Julien، نويسنده , , M. Gendry، نويسنده , , J. Brault، نويسنده , , E. Peronne، نويسنده , , A. Alexandrou، نويسنده , , S.E. Schacham، نويسنده , , E. Finkman، نويسنده ,
Abstract :
InAs nanostructures on View the MathML source have been fabricated using Stranski–Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [110] and [1−10] directions.
Keywords :
Intraband transitions , Quantum dots , Quantum wires , III–V semiconductors