Surface morphology and optical property of 1.3 μm In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of View the MathML source self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining View the MathML source long wavelength emission quantum dots structures.