Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

The influence of the interface morphology upon the electron–hole transport in intrinsic In0.53Ga0.47As/InP quantum structures was investigated by scanning the photoluminescence PL intensity profile on the sample surface. The results suggest that the carrier diffusion is very sensitive to both the roughness of the interfaces and the presence of finite-width terraces. It was found that the carrier density profile shows asymmetric diffusion normal to the terraces whereas it shows symmetric expansion along the terraces.