Peculiarities of conductivity in structures delta-doped by Si on vicinal (1 1 1)A GaAs substrate

Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal View the MathML source substrate misoriented by 0.5°,1.5° and 3° from the View the MathML source GaAs plane towards the View the MathML source direction were formed. In this way it is possible to obtain 1D channels, or at least, 1D periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures Rpa along the steps of vicinal surface is lower than that of Rpe across the steps and depends on temperature.