Magnetoexcitons from spatially separated electron–hole systems in semiconductor heterostructures with disorder

The effect of the diamagnetic shift due to a magnetic field on the formation of excitons is investigated for double layer semiconductor systems in which electrons and holes are spatially separated. The effect of disorder due to interface roughness of the double layer structures is also included in the calculation of exciton density. Numerical calculations are performed for type-II AlAs/GaAs by using an effective lattice-gas model where the electron–hole system is divided into unit cells. It is found that exciton density decreases under the influence of the diamagnetic term.