Title of article
Exciton stark shift in graded GaAs/AlxGa1−xAs quantum wells
Author/Authors
E.C. Ferreira، نويسنده , , J.A.P. da Costa، نويسنده , , J.A.K. Freire، نويسنده , , V.N. Freire، نويسنده , , G.A. Farias، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
220
To page
221
Abstract
The effects of an external electric field in confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied considering realistic interface profiles. It is shown that the graded interfaces can blue shift the exciton energy by more than View the MathML source in the case of a smooth or parabolic (exponential)-like profile for electric fields up to View the MathML source.
Keywords
Stark effect , Exciton , GaAs/AlxGa1?xAs , Graded interfaces
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044981
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