Title of article :
Exciton-based photoluminescence broadening in graded ZnSe/ZnSxSe1−x strained quantum wells
Author/Authors :
F.F. Maia Jr.، نويسنده , , J.A.K. Freire، نويسنده , , V.N. Freire، نويسنده , , G.A. Farias، نويسنده , , E.F. da Silva Jr.، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
The role of interfacial fluctuations on the exciton-related photoluminescence broadening in graded ZnS/ZnSe018S0.82 strained quantum wells is studied taking into account piezoelectric field effects. The broadening of the exciton-related photoluminescence spectra due to the existence of gradual interfaces is shown to be of the order of View the MathML source.
Keywords :
Piezoelectric field , Excitons , ZnSe/ZnSSe
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
