Title of article :
Electronic structure of cubic GaN/AlGaN quantum wells
Author/Authors :
J Arriaga، نويسنده , , H Hern?ndez-Cocoletzi، نويسنده , , D.A Contreras-Solorio، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
For cubic AlxGa1−xN/GaN/AlxGa1−xN quantum wells we calculated the first energy transition 1h–1e as a function of x and the well width. The nearest neighbour View the MathML source empirical tight binding approximation, including spin-orbit interaction, together with the Surface Green Function Matching method is used.
Keywords :
Quantum wells , Nitrides , Electronic structure
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures