Title of article
Band structure and optical gain in GaInAsN quantum wells
Author/Authors
H. Carrère، نويسنده , , A. Arnoult، نويسنده , , X. Marie، نويسنده , , T. Amand، نويسنده , , E. Bedel-Pereira، نويسنده , , R.J. Potter، نويسنده , , H. Bülent Ertan and N. Balkan S¸ims¸ir، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
245
To page
246
Abstract
We have calculated the band structure and gain spectra of GaInAsN strained quantum wells based on the band anticrossing model using a 8 band View the MathML source Hamiltonian. Calculations are in good agreement with experimental values.
Keywords
Gain , Band anticrossing , GaInAsN , Band structure
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045001
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